unisonic technologies co., ltd 7N65K preliminary power m o sfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-770. c 7.4 a , 650v n-channel power mosfet ? descripti on t h e ut c 7N65K is a high voltag e po w e r mosf et an d is desig ne d to have better ch aracteristics, such as fast sw itc h in g time, lo w gate charg e , lo w on-state res i stance an d h a v e a hig h rugg ed av ala n c he ch aracteri stics. t h is po w e r mosf et is usua ll y used at hig h spee d s w itch ing a p p licati o n s in s w itch ing po w e r suppl ies a nd a daptors. ? features * r ds ( on ) < 1 . 4 ? @ v gs = 10 v * ultra lo w g a te charg e (t y p ical 29 nc ) * lo w rev e rse transfer ca pacit ance ( c r ss = t y pi ca l 16 p f ) * fast s w itchi ng capa bilit y * ava l an ch e en ergy te sted * improved dv/dt capab ilit y, hig h rugg edn ess ? sy mbol ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lea d f r ee halo ge n f r ee 1 2 3 7n65 kl-t a3-t 7n65 kg-t a3-t t o -220 g d s tube 7n65 kl-t f 3 -t 7n65 kg-t f 3 -t t o -220f g d s tube 7n65 kl-t f 1 -t 7n65 kg-t f 1 -t t o -220f 1 g d s tube 7n65 kl-t q2-t 7n65 kg-t q2-t t o -263 g d s tube 7n65 kl-t q2-r 7n65 kg-t q2-r t o -263 g d s tape reel note: pin assignment: g: ga te d: drain s: source http://
7N65K preliminary power m o sfet unisonic technologi es co., ltd 2 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 0 . c ? absolute maxi mu m ra ting s (t c = 25c, unless other w i se specifie d) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 650 v gate-source voltage v gss 30 v avala n che c u r r ent (note 2) i ar 7.4 a drain current contin uo us i d 7.4 a pulse d (note 2 ) i dm 29.6 a avalanche energy singl e puls ed ( note 3) e as 200 mj repetitiv e (not e 2) e ar 14.2 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 4.5 v/ns power dissipation t o -220 p d 142 w t o -220f /t o-2 20f 1 48 w t o -263 50 w junctio n t e mperature t j + 150 c storage t e mperature t st g -55 ~ +150 c notes: 1. absolute maximum ratings are those valu es beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitiv e rati ng : pulse w i dth lim ited b y m a xim u m juncti on temperature 3. l = 8.16mh, i as = 7a, v dd = 5 0 v, r g = 25 ? , starting t j = 2 5 c 4. i sd 7.4a, di/dt 200a/ s, v dd bv ds s , starti ng t j = 25c ? th er mal dat a paramet er symbol rat i ngs unit junction to ambient ja 62.5 c/w junction to case t o -220 jc 0.88 c/w t o -220f /t o-2 20f 1 2.6 c/w to-263 2.5 c/w
7N65K preliminary power m o sfet unisonic technologi es co., ltd 3 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 0 . c ? electric al ch ara cteri s tic s (t c = 25c, unless oth e r w is e specifi ed) paramet er symbol t es t conditions min t yp max unit off characteristics drain-source breakd o w n vo l t age bv ds s v gs = 0 v , i d = 250 a 650 v drain-s ource l eaka ge curr en t i ds s v ds = 650v, v gs = 0v 1 a gate- source l eaka ge curr en t fo rw ard i gss v gs = 30v, v ds = 0v 100 na reverse v gs = -30v, v ds = 0v -100 na breakd o w n vo l t age t e mperature co efficient bv ds s / t j i d = 250 a,ref e rence d to 25c 0.67 v/c on ch a r a c t e ristics gate t hreshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.5 4.5 v static drain-s ource on-state resistance r ds ( on ) v gs = 10v, i d = 3.7a 1.1 1.4 ? dynamic characteristics input cap a cita nce c iss v ds = 25v, v gs =0v, f= 1.0 mhz 140 0 pf output capac itance c oss 180 pf reverse t r ansfer capac itanc e c rs s 16 21 pf switching characteristics t u rn-on delay time t d ( on ) v dd = 325v, i d =7.4a r g =2 5 ? (note 1, 2) 70 ns t u rn-on rise t i me t r 80 170 ns t u rn-off delay time t d ( off ) 140 ns t u rn-off fall t i me t f 50 130 ns switching characteristics t o tal gate charge q g v ds = 520v, i d =7 .4 a v gs = 10 v (note 1, 2) 29 38 nc gate-source c harg e q gs 7 nc gate-drain charge q gd 14.5 nc drain-source diode characteristics and maximum ratings drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i s = 7.4 a 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 7.4 a maximum puls ed drai n-so urc e diod e fo rw ard c u rren t i sm 29.6 a reverse recover y time t r r v gs = 0 v , i s = 7.4 a di f / dt = 100a/ s (note 1) 320 ns reverse recovery charge q rr 2.4 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7N65K preliminary power m o sfet unisonic technologi es co., ltd 4 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 0 . c ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * d v/dt controlled by r g * i sd co ntro l l e d by pu l se pe rio d * d. u. t.-d e vice u n de r t e st - + peak diod e r eco v e r y d v /d t t est circu i t p. w. period d= v gs (d r i ve r) i sd (d .u .t . ) i fm , b ody di od e fo rward c u rren t di /d t i rm bo dy dio de r e ve rse curre nt bo dy di ode reco very dv/dt bod y diode forward voltage drop v dd 10 v v ds (d.u.t. ) v gs = p.w. period peak dio d e r eco v e r y d v /d t w a v e fo rms
7N65K preliminary power m o sfet unisonic technologi es co., ltd 5 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 0 . c ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l pulse width 1 s duty factor 0.1% v dd s w itch ing t est circu i t sw it c h i n g w ave f o r m s 50 k ? 0.3f dut same type as d.u.t. 0 . 2f 12v v gs 3ma v ds gate ch arg e t est circu i t gate charge wav e form unc l a m pe d in duc ti v e s w i t c h ing te s t circ uit unc l a m pe d in duc ti v e s w i t c h ing wav e forms
7N65K preliminary power m o sfet unisonic technologi es co., ltd 6 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 0 . c ut c as s u m e s no r e s pons i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r oduc t s at v al ues t hat exc e ed, ev en m o m ent ar i l y , r a t ed v a l ues ( s uc h as m a x i m u m r a t i n g s , op era t i ng c o ndi t i on ra nges , o r ot her par am et er s ) l i s t ed i n pr oduc t s s pec i f i c at i ons of any and al l ut c pr oduc t s des c r i bed or c ont ai ned her ei n. ut c pr oduc t s are not des i gned f or us e i n l i f e s uppor t appl i anc es , dev i c es or s y s t em s w her e m a l f unc t i on of t hes e pr oduc t s c an be r eas ona bl y ex pec t ed t o res u l t i n per s ona l i n j u r y . re pro duc t i on i n w hol e or i n pa rt i s pr ohi bi t ed w i t hout t he pri o r w r i t t en c ons ent o f t he c o p y r i ght ow ne r. t he i n f o r m at i o n pr es ent e d i n t h i s doc um en t do es not f o r m p a rt of any quo t a t i on or c ont r a c t , i s bel i e v ed t o be ac c u r a t e and r el i a bl e and m ay b e c hanged w i t hout n ot i c e.
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